The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Mar. 25, 2021
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventor:

Toru Hiyoshi, Osaka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/07 (2006.01); H01L 23/00 (2006.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01);
U.S. Cl.
CPC ...
H10D 64/518 (2025.01); H01L 25/072 (2013.01); H10D 30/668 (2025.01); H10D 62/8325 (2025.01); H10D 64/661 (2025.01); H01L 24/48 (2013.01); H01L 2224/48175 (2013.01); H01L 2224/48225 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/13091 (2013.01);
Abstract

A transistor includes a wide bandgap semiconductor layer, a gate electrode, a gate pad, and a gate runner. The gate electrode extends to a region where the gate pad is located and a region where the gate runner is located. The gate pad is connected to the gate electrode. The gate runner is connected to the gate electrode. The gate electrode includes a first region connected to the gate pad, a second region connected to the gate runner, and a third region and a fourth region arranged between the first and second regions in different positions in a first direction. In a cross section perpendicular to the first direction, the gate electrode in the fourth region has a cross-sectional area smaller than that of the gate electrode in the third region.


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