The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jun. 13, 2024
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventor:

Hitoshi Noguchi, Takasaki, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 9/00 (2006.01); C30B 23/02 (2006.01); C30B 25/18 (2006.01); C30B 29/04 (2006.01); C30B 29/68 (2006.01); H01L 21/02 (2006.01); H10D 62/40 (2025.01); H10D 62/83 (2025.01); B82Y 30/00 (2011.01); C30B 29/02 (2006.01); C30B 29/16 (2006.01);
U.S. Cl.
CPC ...
H10D 62/8303 (2025.01); C30B 23/025 (2013.01); C30B 25/18 (2013.01); C30B 29/04 (2013.01); C30B 29/68 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02491 (2013.01); H01L 21/02527 (2013.01); H01L 21/02609 (2013.01); H10D 62/405 (2025.01); B82Y 30/00 (2013.01); C30B 29/02 (2013.01); C30B 29/16 (2013.01);
Abstract

A method for manufacturing a laminate substrate which includes a single crystal diamond (111) layer, includes heteroepitaxially growing an intermediate layer on an underlying substrate whose main surface has an off angle within a range, −8.0° or more and −0.5° or less, or +0.5° or more and +8.0° or less in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111); forming diamond nuclei on a surface of the intermediate layer; and heteroepitaxially growing, on the intermediate layer surface on which the nuclei are formed, a single crystal diamond (111) layer which has an off angle within a range, more than −10.5° and less than −2.0°, or more than +2.0° and less than +10.5° in a crystal axis [_1_1 2] direction or a threefold symmetry direction thereof relative to a crystal plane orientation of (111).


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