Power semiconductor device and method for fabricating the same

Abstract

A power semiconductor device includes an SiC semiconductor layer, a plurality of well regions disposed in the semiconductor layer such that two adjacent well regions at least partially make contact with each other, a plurality of source regions on the plurality of well regions in the semiconductor layer, a drift region in a first conductive type, a plurality of trenches recessed into the semiconductor layer from the surface of the semiconductor layer, a gate insulating layer on an inner wall of each trench, a gate electrode layer disposed on the gate insulating layer and including a first part disposed in each trench and a second part on the semiconductor layer, and a pillar region positioned under the plurality of well regions to make contact with the drift region and the plurality of well regions in the semiconductor layer, and having a second conductive type.