The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Apr. 30, 2024
Purdue Research Foundation, West Lafayette, IN (US);
James A. Cooper, Santa Fe, NM (US);
Purdue Research Foundation, West Lafayette, IN (US);
Abstract
A semiconductor device includes a substrate, drift, source, gate and base regions, and a drain portion. The substrate is doped with a first dopant type. The drift region is disposed above the semiconductor substrate, and is doped with the first dopant type at a lower concentration. The source region is doped with the first dopant type. The gate region is disposed above the drift region and part of the source region. The base region is disposed between the source and drift regions. The base region includes a first trench extending in a first direction, and a second trench extending in a second direction and intersecting the first trench. The trenches extend into a top surface of the base region. Each trench has at least a vertical wall and at least a horizontal wall. The base region conduct current on the vertical and horizontal walls of the trenches.