The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Dec. 14, 2022
Mitsubishi Electric Corporation, Tokyo, JP;
Yuji Kawasaki, Tokyo, JP;
Toshihiro Imasaka, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a RESURF layer of a second conductivity type, a buried layer of the second conductivity type formed in the bottom portion of a high-side circuit, and a MOSFET having the RESURF layer serving as a drift layer, in which the MOSFET includes a first semiconductor layer of the second conductivity type serving as a drain layer, an end portion of the first semiconductor layer is located on a low-side circuit side more than an end portion of the buried layer is, and a curvature center of a curved portion of the first semiconductor layer is located closer to a high-side circuit than a curved portion of the buried layer is, and the curvature of the curved portion of the first semiconductor layer is smaller than that of the curved portion of the buried layer.