The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jan. 19, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
Minhyun Lee, Suwon-si, KR;
Taein Kim, Seoul, KR;
Youngtek Oh, Suwon-si, KR;
Suhyeong Lee, Hwaseong-si, KR;
Gukhyon Yon, Hwaseong-si, KR;
Dongkyu Lee, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A vertical NAND flash memory device and a method of manufacturing the same are provided. The vertical NAND flash memory device includes a charge trap layer arranged on an inner wall of a channel hole vertically formed on a substrate. The charge trap layer includes nanostructures distributed in a base. The nanostructures may include a material having a trap density of about 1×10cmto about 10×10cm, and the base may include a material having a conduction band offset (CBO) of about 0.5 eV to about 3.5 eV with respect to the material included in the nanostructures.