The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Feb. 09, 2022
Applicant:

Allegro Microsystems, Llc, Manchester, NH (US);

Inventors:

Thomas S. Chung, Kissimmee, FL (US);

Maxim Klebanov, Palm Coast, FL (US);

Sundar Chetlur, Frisco, TX (US);

James Mcclay, Dudley, MA (US);

Assignee:

Allegro MicroSystems, LLC, Manchester, NH (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/10 (2006.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 30/683 (2025.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); H10D 30/0411 (2025.01); H10D 62/151 (2025.01);
Abstract

In one aspect, a flash memory cell includes a well having a first-type dopant, a source having a second-type dopant and formed within the well, a drain having the second-type dopant and formed within the well, a floating gate above the well, a control gate above the floating gate, an oxide compound disposed between the floating gate and the control gate, and a tunnel oxide disposed between the floating gate and the well. The flash memory cell is configured, in one of a program mode or an erase mode, to move an electron from the source to the floating gate. The flash memory cell is configured, in the other one of the program or the erase mode, to move an electron is from the floating gate to the drain.


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