The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Feb. 19, 2024
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ryo Kambayashi, Yokkaichi, JP;

Kazuto Ohsawa, Yokkaichi, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02);
Abstract

A three dimensional memory device includes: an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a backside trench fill structure that includes a backside trench insulating spacer and a backside contact via structure. The backside contact via structure includes a first metallic nitride liner including a nitride of a first metal, a first metal core fill conductive material portion include a second metal, and a second metallic nitride liner including a nitride of the second metal located between an inner sidewall of the first metallic nitride liner and an outer sidewall of the first metal core fill conductive material portion.


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