The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jan. 27, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yejeong Seo, Goyang-si, KR;

Hyuk Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H10B 12/315 (2023.02); H01L 23/481 (2013.01); H10B 12/482 (2023.02);
Abstract

A semiconductor device includes a substrate, a data storage structure on the substrate, an insulating structure spaced apart from the data storage structure on the substrate, conductive lines spaced apart from each other and stacked in a vertical direction between the data storage structure and the insulating structure, active layers spaced apart from each other and stacked in the vertical direction between the data storage structure and the insulating structure, and intersecting the conductive lines, and a conductive pattern between the insulating structure and the active layers, and electrically connected to the active layers. The insulating structure includes first insulating patterns spaced apart from each other in a first horizontal direction, and a second insulating pattern between the first insulating patterns. The conductive pattern is between the second insulating pattern and the active layers. The second insulating pattern includes a material different from that of the first insulating patterns.


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