The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Feb. 13, 2023
Applicant:

Meta Platforms Technologies, Llc, Menlo Park, CA (US);

Inventors:

Ali Mesgarani, Sunnyvale, CA (US);

Umanath Ramachandra Kamath, Palo Alto, CA (US);

Augusto Ronchini Ximenes, Seattle, WA (US);

Assignee:

Meta Platforms Technologies, LLC, Menlo Park, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 25/50 (2023.01); G01S 17/08 (2006.01); G02B 27/01 (2006.01); H02J 7/00 (2006.01); H02J 7/34 (2006.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01);
U.S. Cl.
CPC ...
H04N 25/50 (2023.01); G02B 27/0172 (2013.01); H02J 7/0063 (2013.01); H02J 7/345 (2013.01); H04N 25/771 (2023.01); H04N 25/78 (2023.01); G01S 17/08 (2013.01); G02B 2027/014 (2013.01); G02B 2027/0178 (2013.01);
Abstract

This disclosure describes a method of operating an image sensor and a plurality of memory cells associated with the image sensor, each memory cell comprising: one or more input lines, a stop exposure output line; a storage capacitor; and a stop exposure circuit. The method may comprise, by each of the memory cells, sensing a voltage representing an exposure event in response to the input lines being enabled, and by a first one of the memory cells, enabling the stop exposure output line in response to a charge on the storage capacitor satisfying a charge threshold; and stopping further exposure of the image sensor in response to the stop exposure output line being enabled for the first one of the memory cells.


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