The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 11, 2024
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Sho Tanaka, Tokyo, JP;
Tatsuo Harada, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01); H10D 12/00 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H03K 17/168 (2013.01); H10D 12/481 (2025.01); H10D 62/127 (2025.01); H10D 62/133 (2025.01);
Abstract
An object is to provide a technique that can reduce energy loss during the transient On-period. A semiconductor device includes a first transistor, a second transistor, and a controller. The controller is configured to, before the first transistor enters a transient Off-state, apply a second Off-voltage lower than a first Off-voltage to the second gate, before the first transistor enters a transient On-state, turn On the second transistor, and after the first transistor is turned On, apply the first Off-voltage to the second gate to turn Off the second transistor.