The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Dec. 27, 2023
Applicant:
Semiconductor Components Industries, Llc, Scottsdale, AZ (US);
Inventors:
Joseph Andrew Yedinak, Mountain Top, PA (US);
Gary Horst Loechelt, Tempe, AZ (US);
Xiaoli Wu, Shanghai, CN;
Assignee:
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/081 (2006.01); H03K 17/687 (2006.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 84/85 (2025.01); H10D 89/60 (2025.01);
U.S. Cl.
CPC ...
H03K 17/08104 (2013.01); H03K 17/687 (2013.01); H10D 62/127 (2025.01); H10D 62/8325 (2025.01); H10D 84/85 (2025.01); H10D 89/813 (2025.01);
Abstract
Devices and methods are disclosed for facilitating faster switching of silicon-based and silicon carbide-based power transistors suitable for use in electric vehicles. The disclosed techniques can minimize the impact on turn-on and turn-off losses, while reducing gate voltage and drain voltage spikes during device switching. A fast/slow cell design incorporating shielded gate MOSFETs controls gate-to-drain capacitance and gate resistances to optimize suppression of voltage overshoot.