The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

May. 09, 2022
Applicant:

Stmicroelectronics France, Montrouge, FR;

Inventors:

Samia Ouyahia, Vernouillet, FR;

Renaud Lemoine, Champigny sur Marne, FR;

Eric Wilhelm, Gisors, FR;

Assignee:

STMICROELECTRONICS France, Montrouge, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/22 (2006.01); H03F 1/02 (2006.01); H03F 3/213 (2006.01); H03F 3/45 (2006.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H03F 3/213 (2013.01); H03F 1/0216 (2013.01); H03F 3/45179 (2013.01); H10D 84/811 (2025.01); H03F 2200/451 (2013.01);
Abstract

According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor; and a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.


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