The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jul. 06, 2022
Applicants:

Electricite DE France, Paris, FR;

Centre National DE LA Recherche Scientifique—cnrs—, Paris, FR;

Ecole Polytechnique, Palaiseau, FR;

Totalenergies Onetech, Courbevoie, FR;

Institut Photovoltaique D'ile DE France (Ipvf), Palaiseau, FR;

Inventors:

Jean-Baptiste Puel, Paris, FR;

Arthur Julien, Antony, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02S 50/15 (2014.01); H02S 40/34 (2014.01);
U.S. Cl.
CPC ...
H02S 50/15 (2014.12); H02S 40/34 (2014.12);
Abstract

A lifetime optimization method for a two-sided photovoltaic module, which includes at least one multi-junction stack, where the stack's first junction layer is on the module's first side, which is exposed to the sun at the beginning of the module's life in the module's base position, and the stack's last junction layer is arranged under the module's second side, which receives diffused and reflected light and light passed through the stack. The method includes measuring the full module's output power (P); calculating an estimated output power for the last junction layer (P) as a function of the first irradiance in the module's turned over position, where the second side becomes its upper side; comparing the estimated Pwith the Pwhen the first side is the upper side and recommending turning over the module when the base position's Pbecomes less than the turned over position's estimated P.


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