The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Dec. 15, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chih-Chao Yang, Glenmont, NY (US);

Daniel Charles Edelstein, White Plains, NY (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Jon Slaughter, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/76877 (2013.01); H10N 70/021 (2023.02); H10N 70/801 (2023.02);
Abstract

A semiconductor device and formation thereof. The semiconductor device including: a first bottom interconnect formed within a first dielectric layer and located within a logic area of the semiconductor device; a second bottom interconnect formed within the first dielectric layer and located within a memory area of the semiconductor device; and a memory device formed on top of the second bottom interconnect located within the memory area of the semiconductor device, wherein: a first metal material used to form the first bottom interconnect located in the logic area is different than a second metal material used to form the second bottom interconnect located in the memory area.


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