The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 12, 2022
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Assignee:
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/01 (2025.01); H01L 21/768 (2006.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H10D 64/01 (2025.01); H10D 64/015 (2025.01); H10D 64/021 (2025.01); H10D 64/258 (2025.01); H10D 64/513 (2025.01);
Abstract
A semiconductor structure includes a substrate, several gate structures formed in the substrate, dielectric portions formed on the respective gate structures, spacers adjacent to and extending along the sidewalls of the dielectric portions, source regions formed between the substrate and the spacers, and contact plugs formed between adjacent gate structures and contact the respective source regions. The source regions are adjacent to the gate structures. The sidewalls of the spacers are aligned with the sidewalls of the underlying source regions.