The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Nov. 23, 2022
Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Sho Nakanishi, Tokyo, JP;

Kodai Ozawa, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H10D 30/66 (2025.01); H10D 64/62 (2025.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H10D 30/668 (2025.01); H10D 64/62 (2025.01);
Abstract

Disclosed is a technique for enhancing adhesion between a semiconductor substrate and a back surface electrode covering the back surface thereof. In particular, the enhancing adhesion technique includes: providing a semiconductor substrate SB having a main surface and a back surface opposite to the main surface, the back surface including n-type silicon; forming a first metal layer on the back surface of the semiconductor substrate SB, the first metal layer including nickel and vanadium which has a thermal diffusion coefficient smaller than that of nickel; performing a heat treatment to the semiconductor substrate to react silicon contained in the semiconductor substrate with nickel contained in the first metal layer to form a NiSiV layer in contact with the back surface of the semiconductor substrate; and forming a second metal including titanium on the NiSiV layer.


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