The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jun. 09, 2021
Applicant:
Dynax Semiconductor, Inc., Kunshan, CN;
Inventors:
Assignee:
DYNAX SEMICONDUCTOR, INC., Kunshan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/18 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10D 62/60 (2025.01); H10D 62/815 (2025.01); H10D 62/82 (2025.01); H10D 62/85 (2025.01); B32B 5/14 (2006.01); C23C 16/02 (2006.01); C23C 16/30 (2006.01); C30B 29/40 (2006.01); H10D 62/824 (2025.01); H10H 20/815 (2025.01);
U.S. Cl.
CPC ...
H01L 21/02458 (2013.01); C30B 25/183 (2013.01); H01L 21/02436 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/02507 (2013.01); H01L 21/02518 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/60 (2025.01); H10D 62/82 (2025.01); H10D 62/8503 (2025.01); B32B 5/145 (2013.01); C23C 16/0272 (2013.01); C23C 16/029 (2013.01); C23C 16/303 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01); H01L 21/0251 (2013.01); H01L 21/02581 (2013.01); H01L 2924/10323 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10344 (2013.01); H10D 62/328 (2025.01); H10D 62/343 (2025.01); H10D 62/824 (2025.01); H10H 20/815 (2025.01); Y10T 428/24942 (2015.01); Y10T 428/2495 (2015.01);
Abstract
Embodiments of the present disclosure provide an epitaxial structure of a semiconductor device and a method of manufacturing the same. The epitaxial structure includes a substrate, and an epitaxial layer located on a side of the substrate, the epitaxial layer including a nucleation layer located on a side of the substrate and a buffer layer located on a side of the nucleation layer away from the substrate, wherein a thickness of the buffer layer is inversely proportional to a thickness of the nucleation layer.