The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Sep. 09, 2020
Applicant:
Daejeon University Industry-university Cooperation Foundation, Daejeon, KR;
Inventors:
Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); B08B 7/00 (2006.01); H01J 37/34 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); B08B 7/005 (2013.01); B08B 7/0057 (2013.01); H01J 37/3211 (2013.01); H01J 37/3488 (2013.01); H01L 21/0206 (2013.01); H01L 21/31116 (2013.01);
Abstract
Proposed are a method and a system for removing L-FC in a plasma etching process, in which L-FC, which is condensed on a wafer, an electrode, a substrate, a head, or the like, is removed by using infrared or ultraviolet rays in a plasma etching process using an L-FC precursor.
Kim, Kyong. (2025). Method and system for removing l-fc in plasma etching process (U.S. Patent No. 12482639). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12482639
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile