The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Mar. 19, 2024
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Hideyuki Hashimoto, Nagaokakyo, JP;

Takehisa Sasabayashi, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/12 (2006.01); H01G 4/224 (2006.01); H01G 4/30 (2006.01);
U.S. Cl.
CPC ...
H01G 4/1227 (2013.01); H01G 4/224 (2013.01); H01G 4/306 (2013.01);
Abstract

A multilayer ceramic capacitor includes dielectric ceramic layers and inner electrode layers. The dielectric ceramic layers include crystal grains including a perovskite oxide including at least one A-site element and at least one B-site element. When a cross-section of the dielectric ceramic layers is observed using a scanning transmission electron microscope, the dielectric ceramic layers include grains, on which a plane of a perovskite structure is observed, as crystal grains. The grains, when subjected to compositional analysis by energy dispersive x-ray spectroscopy, have an atom-distributed region in which a concentration of the A-site element or B-site element (c) subtracted from a maximum concentration of the element (c) (Δc=c−c) is about 2 atm % or less, at one or more atomic sites in the grains, and an area of the atom-distributed region (S) is about 0.050 nmor less.


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