The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jan. 09, 2024
Western Digital Technologies, Inc., San Jose, CA (US);
Quang Le, San Jose, CA (US);
Brian R. York, San Jose, CA (US);
Andrew Chen, San Jose, CA (US);
Jinming Liu, San Jose, CA (US);
Alan Spool, San Jose, CA (US);
Son T. Le, San Jose, CA (US);
Xiaoyong Liu, San Jose, CA (US);
Michael A Gribelyuk, San Jose, CA (US);
Hisashi Takano, Fujisawa, JP;
Xing-Cai Guo, San Jose, CA (US);
Western Digital Technologies, Inc., San Jose, CA (US);
Abstract
Nitrogen doping an insulating layer can lower the bandgap of a magnetic storage device. It is challenging to nitrogen dope magnesium oxide (MgO). A cation can be added to allow the magnesium to hold onto the nitrogen dopant without highly oxidizing or nitriding the cation. The resulting nitrogen doped MgXO, where X is the cation, has a lower bandgap compared to a much similar barrier layer that has neither nitrogen nor a cation thus improving thermal and electrical reliabilities. The nitrogen doped MgXO is non-stoichiometric whereas comparably, an oxynitride is stoichiometric. Example cations that may be used include aluminum, titanium, vanadium, chromium, and scandium.