The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jul. 21, 2023
Applicant:

Lodestar Licensing Group, Llc, Evanston, IL (US);

Inventors:

Violante Moschiano, Avezzano, IT;

Purval S. Sule, Folsom, CA (US);

Han Liu, Sunnyvale, CA (US);

Andrea D'alessandro, Avezzano, IT;

Pranav Kalavade, San Jose, CA (US);

Han Zhao, Santa Clara, CA (US);

Shantanu Rajwade, Sunnyvale, CA (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/12 (2006.01); G11C 5/06 (2006.01); G11C 11/4074 (2006.01); G11C 16/04 (2006.01); G11C 16/34 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 5/063 (2013.01); G11C 11/4074 (2013.01); G11C 16/0483 (2013.01); G11C 16/3427 (2013.01);
Abstract

Memories having a controller configured to perform methods during programming operations including apply a first voltage level to a data line selectively connected to a selected memory cell selected, apply a lower second voltage level to a select gate connected between the data line and the memory cell, decrease the voltage level applied to the data line from the first voltage level to a third voltage level while continuing to apply the second voltage level to the select gate, increase the voltage level applied to the select gate from the second voltage level to a fourth voltage level after the voltage level of the data line settles to the third voltage level, and apply a programming voltage to the memory cell after increasing the voltage level applied to the select gate to the fourth voltage level.


Find Patent Forward Citations

Loading…