Field programmable gate array device including spin orbit torque-magnetic random access memory and operating method thereof

Abstract

Disclosed is a field programmable gate array device including a plurality of lookup tables each storing data. Each lookup table includes a cell array including cells connected to a plurality of word lines, a drive circuit connected to the cell array through the plurality of word lines, and a peripheral circuit connected to the cell array through a plurality of bit lines and source lines, and configured to control the drive circuit. The drive circuit drives a first word line among the word lines based on first input signals. The peripheral circuit performs a data write operation on a first cell connected to the first word line, based on a first command and a second input signal, and performs a data read operation on the first cell connected to the first word line, based on a second command and the second input signal.