The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jul. 20, 2023
Applicants:

Korea Institute of Ceramic Engineering and Technology, Jinju-si, KR;

Electronics and Telecommunications Research Institute, Daejeon, KR;

Inventors:

Dae-Woo Jeon, Jinju-si, KR;

Ji-Hyeon Park, Gunsan-si, KR;

Jae-Kyoung Mun, Daejeon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/04 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); C30B 25/22 (2006.01); C30B 29/16 (2006.01); C30B 29/38 (2006.01);
U.S. Cl.
CPC ...
C30B 25/04 (2013.01); C30B 25/10 (2013.01); C30B 25/165 (2013.01); C30B 25/22 (2013.01); C30B 29/16 (2013.01); C30B 29/38 (2013.01);
Abstract

Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in a HVPE growth manner, and a method for manufacturing the same, in which a nitride-based nitride film pattern is formed on an alpha gallium oxide thin-film so as to expose only a selected area thereof, and re-growth is performed only on the partially exposed area thereof, thereby forming a high-quality patterned alpha gallium oxide re-growth pattern.


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