The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Oct. 14, 2022
Applicant:
Fujifilm Corporation, Tokyo, JP;
Inventor:
Tetsuya Kamimura, Haibara-gun, JP;
Assignee:
FUJIFILM Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 3/34 (2006.01); B24B 37/34 (2012.01); C11D 1/00 (2006.01); C11D 1/65 (2006.01); C11D 3/00 (2006.01); C11D 3/04 (2006.01); C11D 3/20 (2006.01); C11D 3/22 (2006.01); C11D 3/28 (2006.01); C11D 3/30 (2006.01); C11D 3/33 (2006.01); C11D 3/36 (2006.01); C11D 3/37 (2006.01); H01L 21/02 (2006.01); C11D 1/34 (2006.01); C11D 1/62 (2006.01);
U.S. Cl.
CPC ...
C11D 1/65 (2013.01); B24B 37/34 (2013.01); C11D 1/00 (2013.01); C11D 3/0073 (2013.01); C11D 3/042 (2013.01); C11D 3/044 (2013.01); C11D 3/2075 (2013.01); C11D 3/2082 (2013.01); C11D 3/2086 (2013.01); C11D 3/222 (2013.01); C11D 3/28 (2013.01); C11D 3/30 (2013.01); C11D 3/33 (2013.01); C11D 3/361 (2013.01); C11D 3/3765 (2013.01); H01L 21/02074 (2013.01); C11D 1/342 (2013.01); C11D 1/345 (2013.01); C11D 1/62 (2013.01); C11D 2111/22 (2024.01);
Abstract
An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which has excellent corrosion prevention performance for a metal-containing layer. In addition, another object of the present invention is to provide a method for cleaning a semiconductor substrate. The cleaning liquid of an embodiment of the present invention is a cleaning liquid for a semiconductor substrate that has been subjected to a chemical mechanical polishing treatment, in which the cleaning liquid includes a component A having two or more onium structures in a molecule, and water, and has a pH of 7.0 to 11.8 at 25° C.