The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Mar. 08, 2021
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
Osaka University, Suita, JP;
Nichia Corporation, Anan, JP;
Tsukasa Torimoto, Nagoya, JP;
Tatsuya Kameyama, Nagoya, JP;
Susumu Kuwabata, Suita, JP;
Taro Uematsu, Suita, JP;
Yohei Ikagawa, Naruto, JP;
Daisuke Oyamatsu, Tokushima, JP;
Tomoya Kubo, Tokushima, JP;
National University Corporation Tokai National Higher Education and Research System, Nagoya, JP;
OSAKA UNIVERSITY, Suita, JP;
NICHIA CORPORATION, Anan, JP;
Abstract
Provided is a method of producing semiconductor nanoparticles exhibiting band-edge emission with a short emission peak wavelength. The method of producing semiconductor nanoparticles comprises: obtaining a first mixture that contains a Ag salt, an In salt, a compound containing Ga and S, and an organic solvent; and performing a heat treatment of the first mixture at a temperature in a range of 125° C. or higher and 300° C. or lower to obtain first semiconductor nanoparticles.