The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Jan. 19, 2023
Applicant:

SK Enpulse Co., Ltd., Gyeonggi-do, KR;

Inventors:

Seung Chul Hong, Seoul, KR;

Deok Su Han, Seoul, KR;

Han Teo Park, Seoul, KR;

Hwan Chul Kim, Gyeonggi-do, KR;

Kyu Hun Kim, Gyeonggi-do, KR;

Eun Sun Joeng, Gyeonggi-do, KR;

Assignee:

SK enpulse Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); C09K 3/14 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); C09K 3/1436 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 23/53266 (2013.01);
Abstract

The present disclosure is a composition for a semiconductor process applied to a polishing process of a semiconductor wafer and, more specifically, to a semiconductor process involving a polishing process of a semiconductor wafer, wherein the composition includes abrasive particles, and the zeta potential of the abrasive particles is −50 mV to −10 mV at a pH of 6, and the zeta potential change rate represented by Equation 1 below is 6 mV to 30 mV: [Equation 1] Zeta potential change rate (mV/pH)=|(Z6−Z5)/(p6−p5)| where p6 denotes pH 6, p5 denotes pH 5, Z6 denotes a zeta potential at the pH 6, and Z5 denotes a zeta potential at the pH 5.


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