The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Dec. 28, 2021
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Kimitoshi Sato, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); G01L 9/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0029 (2013.01); G01L 9/0042 (2013.01); G01L 9/0051 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0315 (2013.01);
Abstract
A semiconductor pressure sensor includes: a first silicon substrate including a first recessed part; and a second silicon substrate including a diaphragm covering a first space in the first recessed part, the second silicon substrate being configured to hermetically seal the first space. In cross-section, a plurality of second spaces are hermetically sealed in a state of being separated away from the first space between the first silicon substrate and the second silicon substrate, and are provided in one of or each of a first end side and a second end side of the first space.