The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Dec. 14, 2021
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing BOE Technology Development Co., Ltd., Beijing, CN;
Abstract
A light emitting transistor, a method of manufacturing the same, and a display substrate are provided. The light emitting transistor includes: a gate electrode on a base substrate; an insulating layer on a side of the gate electrode away from the base substrate; a first electrode on a side of the insulating layer away from the base substrate, wherein the first electrode is provided with a plurality of through holes therein, which are divided into a plurality of through hole groups arranged side by side in a first direction; each through hole group includes multiple through holes arranged in a second direction, the first direction intersects the second direction; a light emitting functional layer on a side of the first electrode away from the base substrate; and a second electrode on a side of the light emitting functional layer away from the base substrate.