The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 27, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Seung Geun Lee, Yongin-si, KR;

Seung A Lee, Yongin-si, KR;

Dae Hyun Kim, Yongin-si, KR;

Dong Uk Kim, Yongin-si, KR;

Hyun Min Cho, Yongin-si, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/821 (2025.01); H01L 25/075 (2006.01); H10H 20/831 (2025.01); H10H 20/857 (2025.01);
U.S. Cl.
CPC ...
H10H 20/821 (2025.01); H01L 25/0753 (2013.01); H10H 20/8316 (2025.01); H10H 20/857 (2025.01);
Abstract

A light emitting element includes: a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; a third semiconductor layer comprising a third-first semiconductor layer and a third-second semiconductor layer stacked on the second semiconductor layer; and a fourth semiconductor layer disposed on the third-second semiconductor layer. The third semiconductor layer is a tunneling junction layer. A sum of a thickness of the fourth semiconductor layer and the third-second semiconductor layer is different from a sum of a thickness of the second semiconductor layer and the third-first semiconductor layer.


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