The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 28, 2023
Applicant:

Lumentum Operations Llc, San Jose, CA (US);

Inventors:

Takashi Toyonaka, Yokohama, JP;

Hiroshi Hamada, Yokohama, JP;

Ryu Washino, Yokohama, JP;

Shigetaka Hamada, Sagamihara, JP;

Suguru Kato, Sagamihara, JP;

Assignee:

Lumentum Operations, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 77/124 (2025.01); H10F 77/14 (2025.01); H10F 77/20 (2025.01);
U.S. Cl.
CPC ...
H10F 30/223 (2025.01); H10F 77/1248 (2025.01); H10F 77/147 (2025.01); H10F 77/206 (2025.01);
Abstract

A semiconductor photodetector includes a substrate; a mesa structure on the substrate, the mesa structure being composed of some layers including an upper layer and a lower layer, the upper layer being an absorption layer of light, the lower layer being a wide bandgap layer with a bandgap wide enough not to absorb the light; and an insulating film covering a side of the mesa structure, each of the layers comprising single crystals of III-V semiconductors and having a top of a (100) plane, the top of the wide bandgap layer having a shape including a pair of vertices, in [0-11] and [01-1] directions, on a circumference of a minimum bounding circle.


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