The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 27, 2024
Applicants:

Zhejiang Jinko Solar Co., Ltd., Zhejiang, CN;

Jinko Solar Co., Ltd., Jiangxi, CN;

Inventors:

Jingsheng Jin, Zhejiang, CN;

Guangming Liao, Zhejiang, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10F 10/174 (2025.01); H10F 19/80 (2025.01); H10F 19/90 (2025.01); H10F 77/00 (2025.01); H10F 77/122 (2025.01); H10F 77/20 (2025.01); H10F 77/30 (2025.01);
U.S. Cl.
CPC ...
H10F 10/174 (2025.01); H10F 19/80 (2025.01); H10F 77/311 (2025.01); H10F 77/315 (2025.01); H10F 19/906 (2025.01); H10F 77/122 (2025.01); H10F 77/211 (2025.01); H10F 77/935 (2025.01);
Abstract

A solar cell and a photovoltaic module. The solar cell includes: a substrate including a front surface and a back surface, a tunneling layer formed on the back surface of the substrate, a doped conductive layer formed on the tunneling layer, an intrinsic polycrystalline silicon layer formed on the doped conductive layer, a first passivation layer formed on the intrinsic polycrystalline silicon layer, and a first electrode formed on the first passivation layer. The first electrode is in contact with the intrinsic polycrystalline silicon layer by running through the first passivation layer and is spaced apart from the tunneling layer. The photovoltaic module includes the solar cell.


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