The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Dec. 08, 2023
Analog Devices, Inc., Wilmington, MA (US);
Srivatsan Parthasarathy, Acton, MA (US);
Javier A. Salcedo, Chelmsford, MA (US);
Jean-Jacques Hajjar, Lexington, MA (US);
Yuanzhong Zhou, Andover, MA (US);
Tom Pilling, San Diego, CA (US);
Analog Devices, Inc., Wilmington, MA (US);
Abstract
Low capacitance silicon controlled rectifier (SCR) topologies for overvoltage protection are disclosed herein. In certain embodiments, an overvoltage protection circuit is connected between an RF signal pad and a ground signal pad. The overvoltage protection circuit includes a fin field-effect transistor (FinFET) SCR including a PNP bipolar transistor and an NPN bipolar transistor that are cross-coupled, a FinFET trigger circuit connected between an emitter of the PNP bipolar transistor and a base of the NPN bipolar transistor, and a linearity enhancement impedance connected between a reference voltage terminal and the emitter of the PNP bipolar transistor. In certain implementations, a FinFET diode is further included in series with the FinFET SCR with a cathode of the FinFET diode connected to the emitter of the PNP bipolar transistor.