The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Jul. 08, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Hyung Jun Kim, Seoul, KR;

So Young Koo, Hwaseong-si, KR;

Eok Su Kim, Seoul, KR;

Yun Yong Nam, Hwaseong-si, KR;

Jun Hyung Lim, Seoul, KR;

Kyung Jin Jeon, Incheon, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 86/60 (2025.01); H01L 25/16 (2023.01); H10D 86/01 (2025.01); H10D 86/40 (2025.01); H10H 20/857 (2025.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H10D 86/60 (2025.01); H01L 25/167 (2013.01); H10D 86/0231 (2025.01); H10D 86/451 (2025.01); H01L 24/24 (2013.01); H01L 24/25 (2013.01); H01L 2224/24051 (2013.01); H01L 2224/24147 (2013.01); H01L 2224/25175 (2013.01); H01L 2924/12041 (2013.01); H10H 20/857 (2025.01);
Abstract

A display device includes a first conductive layer including a first voltage line and a second voltage line, a buffer layer, a semiconductor layer including a first active layer and a second active layer, a first gate insulating layer, a second conductive layer including a first gate electrode overlapping the first active layer and a second gate electrode overlapping the second active layer, a passivation layer, a via layer, a bank pattern layer including a first bank pattern and a second bank pattern partially spaced apart from each other, a third conductive layer including a first electrode and a second electrode spaced apart from each other, and light emitting elements. The passivation layer includes silicon nitride (SiN), and a ratio of a number of silicon-hydrogen bonds (Si—H) to a number of nitrogen-hydrogen bonds (N—H) in the silicon nitride (SiN) is in a range of about 1:0.6 to about 1:1.5.


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