The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Sep. 30, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jung Gun You, Ansan-si, KR;

Sug Hyun Sung, Yongin-si, KR;

Chan Kyo Park, Seoul, KR;

Seung Chul Oh, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/83 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01);
Abstract

There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device comprising, a first active pattern on a substrate, the first active pattern including a first lower pattern, which extends in a first direction, and first sheet patterns, which are on the first lower pattern, a second active pattern on the substrate, the second active pattern including a second lower pattern, which is spaced apart from the first lower pattern in a second direction and a second sheet patterns, which are on the second lower pattern, wherein the first lower pattern and the second lower pattern is separated by a fin trench.


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