The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 29, 2023
Applicants:
Stmicroelectronics Application Gmbh, Aschheim-Dornach, DE;
Stmicroelectronics (Tours) Sas, Tours, FR;
Inventors:
Mathieu Rouviere, Tours, FR;
Arnaud Yvon, Saint-Cyr sur Loire, FR;
Mohamed Saadna, Saint Cyr-sur-Loire, FR;
Vladimir Scarpa, Dusseldorf, DE;
Assignees:
STMICROELECTRONICS APPLICATION GMBH, Aschheim-Dornach, DE;
STMICROELECTRONICS (TOURS) SAS, Tours, FR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/02 (2006.01); H10D 8/01 (2025.01); H10D 8/60 (2025.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 84/01 (2025.01); H10D 84/05 (2025.01); H10D 84/80 (2025.01);
U.S. Cl.
CPC ...
H10D 84/811 (2025.01); H01L 21/0254 (2013.01); H10D 8/051 (2025.01); H10D 8/60 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01); H10D 64/00 (2025.01); H10D 84/01 (2025.01); H10D 84/05 (2025.01);
Abstract
A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.