The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Aug. 02, 2022
Kabushiki Kaisha Toshiba, Tokyo, JP;
Shigeto Fukatsu, Yokohama, JP;
Yukio Nakabayashi, Yokohama, JP;
Tatsuo Shimizu, Shinagawa, JP;
Ryosuke Iijima, Setagaya, JP;
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Abstract
According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include preparing a structure body, the structure body including a silicon carbide member and a first film stacked with the silicon carbide member. The first film includes silicon and oxygen. The method can include performing a first treatment of heat-treating the structure body in a first atmosphere including hydrogen. The method can include, after the first treatment, performing a second treatment of heat-treating the structure body in a second atmosphere including nitrogen and oxygen. An oxygen concentration in the second atmosphere is not less than 5 ppm and not more than 1000 ppm.