The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jul. 11, 2022
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Jhen-Yu Tsai, Kaohsiung, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/27 (2025.01); H10D 30/63 (2025.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H10D 64/513 (2025.01); H10D 30/63 (2025.01); H10B 12/50 (2023.02);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate having a trench and a gate structure in the trench. The gate structure includes a lower gate electrode and an upper gate electrode over the lower gate electrode. The gate structure also includes a first barrier layer disposed between the lower gate electrode and the upper gate electrode. The gate structure also includes a first dielectric layer disposed between the lower gate electrode and the upper gate electrode. The first dielectric layer is adjacent to the first barrier layer.