The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
May. 29, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Kazuya Konishi, Tokyo, JP;
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Abstract
A semiconductor device which reduces a concentration of the hole current on the upper-surface side. The semiconductor device includes a buffer layer of the first conductivity type, an upper-surface region on the upper-surface side from the buffer layer, and a lower-surface region on the lower-surface side from the buffer layer. A collector layer of the second conductivity type formed in the lower-surface region includes a first collector layer and a second collector layer with impurity concentration lower than that of the first collector layer, these two layers being formed alternately. The upper-surface region includes a first upper-surface region over the first collector layer and a second upper-surface region over the second collector layer. In the first upper-surface region, a hole discharge promoting structure is formed, which promotes hole discharge from the top of the first collector layer.