The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Jan. 14, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Kang-Ill Seo, Albany, NY (US);

Sooyoung Park, Clifton Park, NY (US);

Byounghak Hong, Albany, NY (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 62/118 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 84/0128 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01);
Abstract

A semiconductor device includes: a substrate; at least one hybrid channel structure formed on the substrate and including at least one 1channel structure extended in 1and 2directions in parallel with an upper surface of the substrate without directly contacting the substrate, and a 2channel structure connected to and intersecting the at least one 1channel structure in a 3direction perpendicular to the 1or 2direction; a gate structure surrounding the hybrid channel structure; and source/drain regions respectively formed at two opposite ends of the at least one hybrid channel structure in the 1direction.


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