The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 31, 2023
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Yasuyuki Hoshi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); H10D 30/66 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 62/105 (2025.01); H10D 30/665 (2025.01); H10D 62/8325 (2025.01);
Abstract

An active region has, in a periphery thereof, a p-type outer peripheral region that has sequentially from a front surface of a semiconductor substrate, a p-type contact extension portion, a p-type base extension portion, and an upper portion and a lower portion of a p-type extension portion, so as to form, at an outer end portion thereof, steps that are recessed stepwise toward a center of the active region and that in a depth direction, are arranged in ascending order of proximity thereof to the center. An innermost JTE region configuring a voltage withstanding structure contacts an outer end portion of the contact extension portion. Beneath the JTE region, a p-type embedded region is provided at a same depth as the lower portion of the extension portion so as to be apart from the JTE region and the outer peripheral region and surround the periphery of the active region.


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