The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

May. 23, 2024
Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

Jeongsuk Yang, Paju-si, KR;

Kwangmin Jo, Paju-si, KR;

Sohyung Lee, Paju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 59/121 (2023.01); H10K 59/124 (2023.01);
U.S. Cl.
CPC ...
H10D 30/6757 (2025.01); H10D 30/0321 (2025.01); H10D 30/6706 (2025.01); H10D 30/6715 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01); H10K 59/1213 (2023.02); H10K 59/124 (2023.02);
Abstract

A display apparatus can include a first thin film transistor including a first active layer including polycrystalline silicon, a first gate electrode overlapping the first active layer with a first gate insulation layer therebetween, and a first source electrode and a first drain electrode connected to the first active layer, a first interlayer insulation layer disposed on the first gate electrode, a second thin film transistor including a second active layer including an oxide semiconductor, a second gate electrode overlapping the second active layer with a second gate insulation layer therebetween, and a second source electrode and a second drain electrode connected to the second active layer, and a second interlayer insulation layer disposed on the first gate electrode, the second gate electrode, and the second gate insulation layer. Also, the second gate insulation layer and the second interlayer insulation layer comprise a dopant for doping the second active layer.


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