The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Mar. 31, 2022
Applicant:

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Jie Huang, Beijing, CN;

Ce Ning, Beijing, CN;

Zhengliang Li, Beijing, CN;

Hehe Hu, Beijing, CN;

Niangi Yao, Beijing, CN;

Kun Zhao, Beijing, CN;

Feifei Li, Beijing, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6729 (2025.01); H10D 30/673 (2025.01);
Abstract

Provided are a thin film transistor, a display substrate and a display device, the thin film transistor includes: a gate on a base substrate; an active layer between the gate and the base substrate, the active layer includes a source contact portion, a drain contact portion and a middle portion therebetween, orthographic projections of the middle portion and the gate on the base substrate overlaps to form a first overlapping region, a material of the middle portion includes a metal oxide containing a doped element, a dissociation energy of the doped element from an oxygen element is greater than 500 Kj/mol; a source connected to the source contact portion and a drain connected to the drain contact portion, a ratio of an area of the orthographic projection of the gate on the base substrate to an area of the first overlapping region is less than or equal to 3.


Find Patent Forward Citations

Loading…