The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Nov. 16, 2021
The University of Tokyo, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Toshiro Hiramoto, Tokyo, JP;
Takuya Saraya, Tokyo, JP;
Kiyoshi Takeuchi, Tokyo, JP;
Kazuo Itou, Tokyo, JP;
Toshihiko Takakura, Tokyo, JP;
Munetoshi Fukui, Tokyo, JP;
Shinichi Suzuki, Tokyo, JP;
Katsumi Satoh, Tokyo, JP;
Tomoko Matsudai, Tokyo, JP;
The University of Tokyo, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes an emitter layer of a first conductivity type, a collector layer of a first conductivity type, a drift layer of a second conductivity type provided between the emitter layer and the collector layer, an emitter electrode electrically connected to the emitter layer, a collector electrode electrically connected to the collector layer, one or a plurality of emitter-side gate electrodes arranged to face the emitter layer with an emitter-side gate insulating film interposed therebetween, a first high-concentration impurity layer of a second conductivity type provided between the emitter electrode and the emitter layer, the first high-concentration impurity layer having an impurity concentration higher than an impurity concentration of the emitter layer, an impurity layer of a first conductivity type provided between the drift layer and the collector electrode, one or a plurality of collector-side gate electrodes arranged to face the impurity layer with a collector-side gate insulating film interposed therebetween, and a second high-concentration impurity layer of a second conductivity type provided between the collector electrode and the impurity layer and having an impurity concentration higher than that of the impurity layer, in which a total length of a first facing region of the emitter-side gate electrode in a gate width direction, the first facing region facing the emitter layer with the emitter-side gate insulating film interposed therebetween, is longer than a total length of a second facing region of the collector-side gate electrode in a gate width direction, the second facing region facing the impurity layer with the collector-side gate insulating film interposed therebetween.