The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Mar. 17, 2023
Ablic Inc., Tokyo, JP;
Kazuhiro Tsumura, Tokyo, JP;
ABLIC Inc., Nagano, JP;
Abstract
A bipolar transistor is capable of reducing variations in electrical characteristics. A bipolar transistorincludes: a collector regionwhich is a predetermined region in a P-type semiconductor substrate; a base regionwhich is formed within the collector regionand is an N-type well region; a polysiliconformed on the base regionvia an insulating filmand having an outer periphery, as viewed in a plan view, in a rectangular ring shape; and a P-type emitter regionsurrounded by the polysiliconand formed within the base region. The polysiliconincludes an extension portionextending inside a contact regionof the base regionand electrically connected to the base region
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile