The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Dec. 30, 2022
Samsung Electronics Co., Ltd., Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. The dielectric layer includes a first region in contact with the lower electrodes, a second region in contact with the upper electrode, and a third region between the first and second regions. The third region includes a first insertion layer including a first oxide including a first metal having a first valence and a second oxide including a second metal having a second valence different from the first valence. A thickness of the dielectric layer is about 40 Å to about 60 Å. A thickness of the first insertion layer is about 3 Å to about 10 Å. A ratio of the second metal to total elements in the dielectric layer is about 5 at % to about 15 at %.