The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

May. 07, 2024
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Dong Hun Lee, Icheon-si, KR;

Mi Seong Park, Icheon-si, KR;

Jung Shik Jang, Icheon-si, KR;

Jung Dal Choi, Icheon-si, KR;

In Su Park, Icheon-si, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02);
Abstract

A semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device including a stacked body including conductive patterns and insulating patterns that are alternately stacked, a filling layer configured to pass through the stacked body, a first channel layer configured to pass through the stacked body and coupled to the filling layer, a second channel layer configured to pass through the stacked body and coupled to the filling layer, a first interposed layer configured to pass through the stacked body and disposed between the first channel layer and the filling layer, a second interposed layer configured to pass through the stacked body and disposed between the second channel layer and the filling layer, and a memory layer surrounding the filling layer, the first and second channel layers, and the first and second interposed layers.


Find Patent Forward Citations

Loading…