logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12477735 B1

PDFFull Text
Date of Patent:
Nov. 18, 2025

Filed:

Jan. 10, 2024

Apparatuses including insulative structures of stack structures having different portions and related memory devices

Applicant:

Lodestar Licensing Group Llc, Evanston, IL (US);

Inventors:

Srikant Jayanti, Boise, ID (US);

Fatma Arzum Simsek-Ege, Boise, ID (US);

Pavan Kumar Reddy Aella, Eagle, ID (US);

Assignee:

Lodestar Licensing Group LLC, Evanston, IL (US);

Attorney:

TraskBritt

Primary Examiner:

Daniel Whalen

Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H10B 41/20 (2023.01); H10B 41/27 (2023.01); H10D 30/01 (2025.01); H10D 30/68 (2025.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 21/02164 (2013.01); H01L 21/022 (2013.01); H01L 21/02274 (2013.01); H01L 21/0234 (2013.01); H01L 21/31111 (2013.01); H01L 21/32134 (2013.01); H10B 41/27 (2023.02); H10D 30/0411 (2025.01); H10D 30/683 (2025.01); H10D 30/689 (2025.01); H10B 41/20 (2023.02); H10D 30/693 (2025.01);
Abstract

Semiconductor structures may include a stack of alternating dielectric materials and control gates, charge storage structures laterally adjacent to the control gates, a charge block material between each of the charge storage structures and the laterally adjacent control gates, and a pillar extending through the stack of alternating oxide materials and control gates. Each of the dielectric materials in the stack has at least two portions of different densities and/or different rates of removal. Also disclosed are methods of fabricating such semiconductor structures.

Find Patent Forward Citations

Loading…