The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Sep. 02, 2022
Kioxia Corporation, Tokyo, JP;
Harumi Seki, Kawasaki, JP;
Masamichi Suzuki, Koto, JP;
Reika Tanaka, Yokohama, JP;
Kensuke Ota, Yokohama, JP;
Yusuke Higashi, Zushi, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
A semiconductor memory device according to an embodiment includes a stacked body in which a gate electrode layer and a first insulating layer are alternately stacked in a first direction, a semiconductor layer in the stacked body and extending in the first direction, a second insulating layer between the semiconductor layer and the stacked body, a third insulating layer provided between the second insulating layer and the stacked body, and a first layer between the second insulating layer and the third insulating layer. The first layer contains silicon and nitrogen and includes a first region between the gate electrode layer and the semiconductor layer and a second region between the first insulating layer and the semiconductor layer, the first region contains or does not contain fluorine, the second region contains fluorine, and a fluorine concentration of the second region is higher than a fluorine concentration of the first region.