The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2025
Filed:
Jun. 15, 2022
Kioxia Corporation, Tokyo, JP;
Akifumi Gawase, Kuwana Mie, JP;
Ha Hoang, Kuwana Mie, JP;
Atsuko Sakata, Yokkaichi Mie, JP;
Yuta Kamiya, Nagoya Aichi, JP;
Kazuhiro Matsuo, Kuwana Mie, JP;
Keiichi Sawa, Yokkaichi Mie, JP;
Kota Takahashi, Yokkaichi Mie, JP;
Kenichiro Toratani, Yokkaichi Mie, JP;
Yimin Liu, Yokkaichi Mie, JP;
Kioxia Coporation, Tokyo, JP;
Abstract
A semiconductor device of embodiments includes: a first electrode; a second electrode; an oxide semiconductor layer between the first electrode and the second electrode; a gate electrode surrounding the oxide semiconductor layer; a gate insulating layer between the gate electrode and the oxide semiconductor layer; a first insulating layer provided between the first electrode and the gate electrode; and a second insulating layer provided between the second electrode and the gate electrode. In a cross section parallel to a first direction from the first electrode to the second electrode, a first portion of the oxide semiconductor layer is provided between the gate insulating layer and the first electrode. In the cross section, a second portion of the oxide semiconductor layer is provided between the gate insulating layer and the second electrode.